Spin orbit torque magnetic ram
AssigneeKorea Institute of Science and Technology
InventorsOukjae Lee, Byoung-Chul Min
Life of this patent
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Abstract
A spin torque magnetic RAM according to the present invention includes at least one row selection line positioned on a silicon substrate to induce a spin orbit interaction therein; at least one first magnetic pattern positioned on the row selection line; a second magnetic pattern positioned on the first magnetic pattern; a tunnel barrier positioned on the second magnetic pattern; and a third magnetic pattern positioned on the tunnel barrier, wherein the first magnetic pattern is made of a cobalt film, the first magnetic pattern and the second magnetic pattern have a total thickness of 5 nm to form a free layer, and the third magnetic pattern is formed with a pinned layer in which a magnetization direction is fixed.
Claims10
A spin orbit torque magnetic RAM, comprising:
- at least one row selection line positioned on a silicon substrate to induce a spin orbit interaction therein;
- at least one first magnetic pattern positioned on the row selection line;
- a second magnetic pattern positioned on the first magnetic pattern;
- a tunnel barrier positioned on the second magnetic pattern;
- and
- a third magnetic pattern positioned on the tunnel barrier,
- wherein the first magnetic pattern is made of a cobalt film,
- the first magnetic pattern and the second magnetic pattern have a total thickness of 5 nm to form a free layer, and
- the third magnetic pattern is formed with a pinned layer in which a magnetization direction is fixed.
Dependencies are inferred from the claim text.