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US 2019/0165234 A1Published application
Jointing material, fabrication method for semiconductor device using the jointing material, and semiconductor device
AssigneePanasonic Intellectual Property Management Co., Ltd.
InventorsHidetoshi KITAURA, Akio FURUSAWA, Kiyohiro HINE
Life of this patent
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Abstract
A jointing material includes: at least one type of element at 0.1 wt % to 30 wt %, the element being capable of forming a compound with each of tin and carbon; and tin at 70 wt % to 99.9 wt % as a main component.
Claims8
A jointing material comprising:
- at least one type of element at 0.1 wt % to 30 wt %, the element being capable of forming a compound with each of tin and carbon;
- and
- tin at 70 wt % to 99.9 wt % as a main component.
Dependencies are inferred from the claim text.