Led chip and led module using the led chip

An LED chip comprising:

• a semiconductor stacked structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
• a passivation layer comprising an opening through which a portion of the lower surface of the semiconductor stacked structure is exposed;
• an upper electrode pad connected to the upper surface of the semiconductor stacked structure;
• and a lower electrode pad connected to the lower surface of the semiconductor stacked structure through the opening, wherein the lower electrode pad comprises a multilayer body comprising a plurality of metal layers and a contact body connected to the multilayer body, the contact body comprises a surface contact part in contact with the passivation layer outside the opening and an ohmic contact part in contact with the first or second conductive semiconductor layer through the opening, the ohmic contact part comprises an ohmic contact layer in direct contact with the first or second conductive semiconductor layer and comprising Au and one or more metal layers formed on the ohmic contact layer and interposed between the ohmic contact layer and the surface contact part, and the ratio of the area of the opening to the surface area of the ohmic contact layer is from 0.1:1 to 0.3:1.

An LED module comprising:

• a mount substrate comprising electrodes;
• an LED chip comprising a semiconductor stacked structure, a passivation layer covering the outer surface of the semiconductor stacked structure, and electrode pads connected to the outer surface of the semiconductor stacked structure through openings formed in the passivation layer;
• and solder bumps connecting the electrode pads to the corresponding electrodes and formed using a solder material represented by Sn-M (where M is a metal), wherein each of the electrode pads comprises a multilayer body comprising a plurality of metal layers and a contact body connected to the multilayer body, the contact body comprises a surface contact part in contact with the passivation layer outside the opening and an ohmic contact part in contact with the semiconductor stacked structure through the opening, the surface contact part in contact with the passivation layer blocks the Sn component of the solder bump from reaching the ohmic contact part through the opening, the ohmic contact part comprises an ohmic contact layer in direct contact with the semiconductor stacked structure and comprising Au and one or more metal layers formed on the ohmic contact layer and interposed between the ohmic contact layer and the surface contact part, and the ratio of the area of the opening to the surface area of the ohmic contact layer is from 0.1:1 to 0.3:1.