Optoelectronic semiconductor chip
AssigneeOSRAM Opto Semiconductors GmbH
InventorAlexander F. Pfeuffer
Life of this patent
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Abstract
An optoelectronic semiconductor chip includes a semiconductor body including an n-conducting region, a p-conducting region and an active region between the n-conducting region and the p-conducting region; a first mirror containing a first metallic layer, and a p-metallization containing a second metallic layer, wherein during operation of the semiconductor chip, the first mirror is not at the same electrical potential as the p-conducting region, during operation of the semiconductor chip, the p-metallization is at the same electrical potential as the p-conducting region, and the first mirror has at least one opening through which the p-metallization is electrically conductively connected to the p-conducting region.
Claims17
-15. (canceled)
An optoelectronic semiconductor chip comprising:
- a semiconductor body comprising an n-conducting region, a p-conducting region and an active region between the n-conducting region and the p-conducting region;
- a first mirror containing a first metallic layer, and
- a p-metallization containing a second metallic layer, wherein
- during operation of the semiconductor chip, the first mirror is not at the same electrical potential as the p-conducting region,
- during operation of the semiconductor chip, the p-metallization is at the same electrical potential as the p-conducting region, and
- the first mirror has at least one opening through which the p-metallization is electrically conductively connected to the p-conducting region.
An optoelectronic semiconductor chip comprising:
- a semiconductor body comprising an n-conducting region, a p-conducting region and an active region between the n-conducting region and the p-conducting region;
- a first mirror containing a first metallic layer, and
- a p-metallization containing a second metallic layer, wherein
- during operation of the semiconductor chip, the first mirror is not at the same electrical potential as the p-conducting region,
- during operation of the semiconductor chip, the p-metallization is at the same electrical potential as the p-conducting region,
- the first mirror has at least one opening through which the p-metallization is electrically conductively connected to the p-conducting region, and
- the active region is completely surrounded by the first mirror in lateral directions.
Dependencies are inferred from the claim text.