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US 2019/0165214 A1Published application
Semiconductor structure, light-emitting device and manufacturing method for the same
AssigneeIndustrial Technology Research Institute
InventorJui-Mei HSU
Life of this patent
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Abstract
A semiconductor structure, a light-emitting device and a manufacturing method for the same are provided. The light-emitting device includes a light emitting diode and a conductive film. The conductive film contains quantum dots and is disposed on the light emitting diode.
Claims20
A manufacturing method for a semiconductor structure, comprising:
- an element adhesion step comprising adhering a semiconductor element onto a first surface of a light-transmitting substrate;
- and
- an element transfer step comprising performing an irradiating step to the light-transmitting substrate being wholly separated from an acceptor substrate by an empty space so as to cause a vaporizing phenomenon between the light-transmitting substrate and the semiconductor element, wherein the vaporizing phenomenon allows the semiconductor element to be pushed away from the light-transmitting substrate and then pass through the empty space to get onto the acceptor substrate.
A manufacturing method for a semiconductor structure, comprising:
- an element adhesion step comprising adhering an adhesive layer containing quantum dots onto a first surface of a light-transmitting substrate, wherein the adhesive layer containing the quantum dots has a conductive property;
- and
- an element transfer step comprising performing an irradiating step to the light-transmitting substrate so as to cause a vaporizing phenomenon between the light-transmitting substrate and the adhesive layer containing the quantum dots, wherein the vaporizing phenomenon allows the adhesive layer containing the quantum dots to be pushed away from the light-transmitting substrate and then pass through the empty space to get onto an acceptor substrate.
A light-emitting device, comprising:
- a light-emitting diode;
- and
- a conductive film containing quantum dots and disposed on the light-emitting diode, wherein the conductive film is used as an electrode layer of the light-emitting diode.
Dependencies are inferred from the claim text.