Light emitting element

A light-emitting device comprising:

• a substrate;
• a light-emitting structure comprising a n-type semiconductor layer disposed on the substrate, a p-type semiconductor layer disposed on the n-type semiconductor layer, and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer;
• a light-transmissive conductive layer disposed on the p-type semiconductor layer,
• an electrode disposed on the light-transmissive conductive layer;
• and
• wherein the light-transmissive conductive layer comprises:
• a first conductive oxide layer comprising at least one first metal element and oxygen;
• and
• a second conductive oxide layer disposed on the first conductive oxide layer,
• wherein the second conductive oxide layer comprises a plurality of grains disposed on a surface of the first conductive oxide layer, and
• wherein each of the grains is made of a compound of a metal element identical to the first metal element, a second metal element, and oxygen.

A light-emitting device comprising:

• a substrate;
• a light-emitting structure comprising a n-type semiconductor layer disposed on the substrate, a p-type semiconductor layer disposed on the n-type semiconductor layer, and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer;
• a first light-transmissive conductive layer disposed on the p-type semiconductor layer,
• a first electrode disposed on the n-type semiconductor layer;
• a second electrode disposed on the first light-transmissive conductive layer;
• and
• a second light-transmissive conductive layer disposed between the n-type semiconductor layer and the first electrode,
• wherein each of the first and second light-transmissive conductive layers comprises:
• a first conductive oxide layer comprising at least one first metal element and oxygen;
• and
• a second conductive oxide layer disposed on the first conductive oxide layer,
• wherein the second conductive oxide layer comprises a plurality of grains disposed on a surface of the first conductive oxide layer, and
• wherein each of the grains is made of a compound of a metal element identical to the first metal element, a second metal element, and oxygen.