Light emitting diode

A light emitting diode comprising:

• a nitride semiconductor stack comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, the nitride semiconductor stack comprising an exposed region exposing the first conductivity type semiconductor layer;
• a first connection pad connected to the first conductivity type semiconductor layer through the exposed region and a lower extension extending from the first connection pad;
• and
• a first current blocking layer interposed between the first connection pad and the first conductivity type semiconductor layer,
• wherein the first connection pad comprises a first curved region having a radius of curvature of R1,
• the first current blocking layer comprises a second curved region having a radius of curvature of R2, the second curved region being disposed adjacent to an inner side of the first curved region, and
• the lower extension comprises a connecting portion adjoining the first connection pad and a main extension extending from the connecting portion, the connecting portion comprising a third curved region having a radius of curvature of R3.