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US 2019/0165201 A1Published application
Avalanche photodiode
AssigneeWooriro Co., Ltd.
InventorsChan Yong PARK, Seoung Hwan PARK
Life of this patent
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Abstract
An avalanche photodiode includes: a first contact layer; a light absorbing layer located on the first contact layer and having a multi-quantum well structure; a first electric field control layer located on the light absorbing layer; and a carrier multiplication layer located on the first electric field control layer. At least one of the multi-quantum well structure includes a well layer that includes Ga1-xAlxN (0≤X≤0.3), and a barrier layer that includes Ga1-xAlxN (0.7≤X≤1) and a doping portion doped with a p-type dopant.
Claims10
An avalanche photodiode comprising:
- a first contact layer;
- a light absorbing layer located on the first contact layer and having a multi-quantum well structure;
- a first electric field control layer located on the light absorbing layer;
- and
- a carrier multiplication layer located on the first electric field control layer,
- wherein at least one of the multi-quantum well structure comprises a well layer that comprises Ga1-xAlxN (0≤X≤0.3), and a barrier layer that comprises Ga1-xAlxN (0.7≤X≤1) and a doping portion doped with a p-type dopant.
3 more elements
Dependencies are inferred from the claim text.