Method And System For A Focused Field Avalanche Photodiode

A system for communication, the system comprising:

• an avalanche photodiode comprising an absorbing layer, an anode, a cathode, an N-doped layer, a P-doped layer, and a multiplication region between the N-doped layer and the P-doped layer, wherein oxide interfaces are at top and bottom surfaces of the anode, cathode, N-doped layer, P-doped layer, and multiplication region, the avalanche photodiode being operable to:
• absorb a received optical signal in the absorbing layer to generate carriers;
• and
• direct the carriers to a center of the cathode using doping profiles in the N-doped layer and the P-doped layer that vary in a direction perpendicular to the top and bottom surfaces of the N-doped layer and the P-doped layer.

A system for communication, the system comprising:

• an avalanche photodiode comprising a germanium absorbing layer, an anode, a cathode, an N-doped layer, a P-doped layer, and a multiplication region between the N-doped layer and the P-doped layer, wherein oxide interfaces are at top and bottom surfaces of the anode, cathode, N-doped layer, P-doped layer, and multiplication region, the avalanche photodiode being operable to:
• absorb a received optical signal in the germanium absorbing layer to generate carriers;
• and
• focus the carriers to a center of the cathode using doping profiles in the N-doped layer and the P-doped layer that vary in a direction perpendicular to the top and bottom surfaces of the N-doped layer and the P-doped layer.