Semiconductor device and method of forming the same
AssigneeThe Hong Kong University of Science and Technology
InventorsQinglin He, Ying Hoi Lai, Yi Liu, Iam Keong Sou
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Abstract
A UV radiation detector includes: a diode including a substrate having a first side and a second side, the first side and the second side being located on opposing faces of the substrate, an active layer including rocksalt phase crystalline structure CaS disposed on the first side of the substrate, an electrical contact disposed on the second side of the substrate, and a semi-transparent conducting layer disposed on the active layer; and a circuit connecting the semi-transparent conducting layer and the electrical contact. The UV radiation detector detects radiation having a wavelength between 200 and 280 nm.
Claims23
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A UV radiation detector comprising:
- a diode, the diode comprising:
- a substrate having a first side and a second side, the first side and the second side being located on opposing faces of the substrate;
- an active layer comprising rocksalt phase crystalline structure CaS disposed on the first side of the substrate;
- an electrical contact disposed on the second side of the substrate;
- and
- a semi-transparent conducting layer disposed on the active layer;
- and
- a circuit connecting the semi-transparent conducting layer and the electrical contact.
- wherein the UV radiation detector detects radiation having a wavelength between 200 and 280 nm.
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Dependencies are inferred from the claim text.