Back to results
US 2019/0165198 A1Published application
Photodetector, photodetection system, lidar apparatus, vehicle, and method of manufacturing photodetector
AssigneeKabushiki Kaisha Toshiba
InventorsHonam KWON, Toshiya YONEHARA, Hitoshi YAGI, Ikuo FUJIWARA, Kazuhiro SUZUKI
Life of this patent
Estimating the term…
Abstract
A photodetector includes a first semiconductor layer and a second semiconductor layer provided on the first semiconductor layer and detecting light. The first semiconductor layer has a cavity portion for reflecting incident light.
Claims20
A photodetector comprising:
- a first semiconductor layer;
- and
- a second semiconductor layer provided on the first semiconductor layer and detecting light,
- wherein the first semiconductor layer has a cavity portion for reflecting incident light.
1 more element
A method of manufacturing a photodetector, comprising:
- forming a second semiconductor layer on a first semiconductor layer;
- forming a mask layer on a portion of the second semiconductor layer;
- forming a groove having a predetermined width from the mask layer to the first semiconductor layer by dry etching;
- and
- forming a cavity portion depending on a material of the first semiconductor layer in the groove of the first semiconductor layer by wet etching.
2 more elements
Dependencies are inferred from the claim text.