Light absorption layer, dispersion, photoelectric conversion element, solar cell, and method for manufacturing light absorption layer
AssigneeKao Corporation
InventorsHiroji HOSOKAWA, Takuya SAWADA, Yohei SHIRAISHI
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Abstract
The present invention pertains to a light absorption layer for forming a solar cell and a photoelectric conversion element having excellent durability and photoelectric conversion efficiency in the near infrared region, and a solar cell and a photoelectric conversion element having the light absorption layer. This light absorption layer contains a perovskite compound having a band gap energy of 1.7-4.0 eV, and a quantum dot having a band gap energy equal to or higher than 0.2 eV and equal to or lower than the band gap energy of the perovskite compound.
Claims22
A light absorption layer containing a perovskite compound having a band gap energy of 1.7 eV or more and 4.0 eV or less and a quantum dot having a band gap energy equal to or more than 0.2 eV and equal to or less than the band gap energy of the perovskite compound.
A light absorption layer containing a perovskite compound having a band gap energy of 1.7 eV or more and 4.0 eV or less and showing a peak of an emission spectrum in a range of 0.2 eV or more and 1.4 eV or less when excited with light having a wavelength of 800 nm (energy 1.55 eV).
A dispersion containing a perovskite compound having a band gap energy of 1.7 eV or more and 4.0 eV or less or a precursor thereof and a quantum dot having a band gap energy equal to or more than 0.2 eV and equal to or less than the band gap energy of the perovskite compound.
A method for manufacturing a light absorption layer containing a perovskite compound having a band gap energy of 1.7 eV or more and 4.0 eV or less and a quantum dot having a band gap energy equal to or more than 0.2 eV and equal to or less than the band gap energy of the perovskite compound, comprising a step of mixing the perovskite compound or its precursor with the quantum dot.
Dependencies are inferred from the claim text.