US 2019/0165188 A1 · SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

Abstract

A semiconductor device includes a capacitive device, a first conductive via, and a second conductive via. The capacitive device includes a first conductive plate, a first insulating plate, a second conductive plate, a second insulating plate, and a third conductive plate. The first conductive via is electrically coupled to the first conductive plate and the third conductive plate, and the first conductive via penetrated through a first film stack with a first thickness. The second conductive via is electrically coupled to the second conductive plate, and the second conductive via penetrated through a second film stack with a second thickness. The second thickness is substantially equal to the first thickness.

Claims20

Dependent claims

A semiconductor device, comprising:

a capacitive device, comprising:
a first conductive plate;
a first insulating plate, disposed on the first conductive plate;
a second conductive plate, disposed on the first insulating plate;
a second insulating plate, disposed on the second conductive plate;
and
a third conductive plate, disposed on the second insulating plate;
a first conductive via, electrically coupled to the first conductive plate and the third conductive plate, and the first conductive via penetrated through a first film stack with a first thickness;
and
a second conductive via, electrically coupled to the second conductive plate, and the second conductive via penetrated through a second film stack with a second thickness;
wherein the second thickness is substantially equal to the first thickness.

8 more elements

A method of forming a semiconductor device, the method comprising:

depositing a first conductive plate;
disposing a first insulating plate on the first conductive plate;
depositing a second conductive plate on the first insulating plate;
depositing a second insulating plate on the second conductive plate;
depositing a third conductive plate on the second insulating plate;
depositing a fourth conductive plate on the second insulating plate;
forming a first conductive via penetrating the third conductive plate, the second insulating plate, the first insulating plate, and the first conductive plate, wherein the first conductive via is electrically coupled to the third conductive plate and the first conductive plate;
and
forming a second conductive via penetrating the fourth conductive plate, the second insulating plate, the second conductive plate, and the first insulating plate, wherein the second conductive via is electrically coupled to the fourth conductive plate and the second conductive plate.

6 more elements

A method of forming a semiconductor device, the method comprising:

depositing a first conductive plate and a second conductive plate;
depositing a first insulating plate on the first conductive plate and the second conductive plate;
depositing a third conductive plate on the first insulating plate;
depositing a second insulating plate on the third conductive plate;
depositing a fourth conductive plate on the second insulating plate;
forming a first conductive via penetrating the fourth conductive plate, the second insulating plate, the first insulating plate, and the first conductive plate, wherein the first conductive via is electrically coupled to the fourth conductive plate and the first conductive plate;
and
forming a second conductive via penetrating the second insulating plate, the third conductive plate, the first insulating plate, and the second conductive plate, wherein the second conductive via is electrically coupled to the third conductive plate and the second conductive plate.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method of forming the same

Life of this patent

Semiconductor device and method of forming the same

Life of this patent

Abstract

Claims20