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US 2019/0165187 A1Published application
Diode device and method of manufacturing diode device
AssigneeFuji Electric Co., Ltd.
InventorsRyo TANAKA, Shinya TAKASHIMA, Katsunori UENO, Masaharu EDO
Life of this patent
Estimating the term…
Abstract
A diode is provided, the diode including: a semiconductor layer of a first conductivity type, configured to have a trench structure and be an epitaxial layer of a wide gap semiconductor; a semiconductor layer of a second conductivity type, configured to be at least in contact with a side wall of the trench structure and be an epitaxial layer of the wide gap semiconductor; and an electrode configured to be in contact with the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, on the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type.
Claims11
A diode comprising:
- a semiconductor layer of a first conductivity type having a trench structure and being an epitaxial layer of a wide gap semiconductor;
- a semiconductor layer of a second conductivity type being at least in contact with a side wall of the trench structure and being an epitaxial layer of the wide gap semiconductor;
- and
- an electrode provided on the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, the electrode being in contact with the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, wherein
- an angle formed by the side wall and a bottom of the trench structure between 40 degrees and 60 degrees, inclusive.
2 more elements
A diode comprising:
- a semiconductor layer of a first conductivity type, configured to have a trench structure and be an epitaxial layer of a wide gap semiconductor;
- a semiconductor layer of a second conductivity type, configured to be at least in contact with a side wall of the trench structure and be an epitaxial layer of the wide gap semiconductor;
- and
- an electrode configured to be in contact with the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, on the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, wherein
- the semiconductor layer of the first conductivity type has:
- a first trench structure and a second trench structure that are provided adjacent to each other in an array direction in which a plurality of trench structures, including the trench structure, are arrayed to be spaced away from each other;
- and
- a mesa structure that is positioned between the first trench structure and the second trench structure in the array direction, and
- the semiconductor layer of the first conductivity type includes, respectively in a top portion of the mesa structure and side walls of the first and the second trench structures, a high concentration region having a higher dopant concentration of a first conductivity type than a dopant concentration of a first conductivity type in a bottom of each of the first and the second trench structures.
6 more elements
A diode comprising:
- a semiconductor layer of a first conductivity type configured to have a trench structure and be an epitaxial layer of a wide gap semiconductor;
- a semiconductor layer of a second conductivity type, configured to be at least in contact with a side wall of the trench structure and be an epitaxial layer of the wide gap semiconductor;
- and
- an electrode configured to be in contact with the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, on the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, wherein
- the semiconductor layer of the first conductivity type has:
- a first trench structure and a second trench structure that are provided adjacent to each other in an array direction in which a plurality of trench structures, including the trench structure, are arrayed to be spaced away from each other;
- and
- a mesa structure that is positioned between the first trench structure and the second trench structure in the array direction,
- the semiconductor layer of the second conductivity type includes:
- a semiconductor junction region that is in contact with the semiconductor layer of the first conductivity type;
- and
- a metal junction region that is positioned on an opposite side to the semiconductor junction region in a thickness direction of the semiconductor layer of the second conductivity type and that is in contact with the electrode, and
- a dopant concentration of a second conductivity type of the metal junction region is higher than a dopant concentration of a second conductivity type of the semiconductor junction region.
10 more elements
Dependencies are inferred from the claim text.