Method of treating interfacial layer on silicon germanium
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Yu CHANG, Hsiang-Pi CHANG, Zi-Wei FANG
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Abstract
A method includes forming a channel region on a semiconductor substrate. An interfacial layer is formed on the channel region. The interfacial layer is treated with trimethyl aluminum (TMA). A high-k dielectric layer is formed on the interfacial layer after treating the interfacial layer with TMA. A gate electrode is formed on the high-k dielectric layer. The treating the interfacial layer with TMA and forming the high-k dielectric layer are performed in the same chamber. The interfacial layer is annealed before treating the interfacial layer with TMA. The annealing the interfacial layer and treating the interfacial layer with TMA are performed in different chambers.
Claims20
A method comprising:
- forming a channel region on a semiconductor substrate;
- forming an interfacial layer on the channel region;
- treating the interfacial layer with trimethyl aluminum (TMA);
- forming a high-k dielectric layer on the interfacial layer after treating the interfacial layer with TMA;
- and
- forming a gate electrode on the high-k dielectric layer.
A method comprising:
- forming a channel region on a semiconductor substrate;
- forming an interfacial layer on the channel region;
- forming a high-k passivation layer on the interfacial layer, wherein the high-k passivation layer comprises high-k silicate, high-k germanate, or combinations thereof;
- forming a high-k dielectric layer on the high-k passivation layer;
- and
- forming a gate electrode on the high-k dielectric layer.
A device comprising:
- a semiconductor substrate having a channel region;
- an interfacial layer on the channel region;
- a high-k passivation layer on the interfacial layer, wherein the high-k passivation layer comprises high-k silicate, high-k germanate, or combinations thereof;
- and
- a high-k dielectric layer on the high-k passivation layer;
- and
- a gate electrode on the high-k dielectric layer.
Dependencies are inferred from the claim text.