Thin film transistor, method for manufacturing the same and display device comprising the same

A method for manufacturing a thin film transistor, the method comprising:

• forming an oxide semiconductor layer on a substrate;
• forming a gate insulating film on the oxide semiconductor layer;
• forming a gate electrode on the gate insulating film to partially overlap the oxide semiconductor layer;
• forming a hydrogen supply layer on the gate insulating film;
• irradiating ultraviolet rays to the hydrogen supply layer;
• and
• forming a source electrode and a drain electrode spaced apart from each other and respectively connected with the oxide semiconductor layer.

A display device comprising:

• a substrate;
• a thin film transistor disposed on the substrate;
• and
• a first electrode connected with the thin film transistor,
• wherein the thin film transistor includes:
• an oxide semiconductor layer on the substrate;
• a gate insulating film on the oxide semiconductor layer;
• a gate electrode on the gate insulating film;
• a hydrogen supply layer on the gate insulating film;
• a source electrode connected with the oxide semiconductor layer;
• and
• a drain electrode spaced apart from the source electrode and connected with the oxide semiconductor layer, and
• wherein the oxide semiconductor layer includes a channel portion overlapped with the gate electrode and a connecting portion not overlapped with the gate electrode, a hydrogen concentration of the connecting portion is higher than that of the channel portion, the gate insulating film includes a first area overlapped with the gate electrode and a second area not overlapped with the gate electrode, and a hydrogen concentration of the second area is higher than that of the first area.