Fluorine doped non-volatile memory cells and methods for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHung-Lin CHEN, Shiuan-Jeng Lin, Wen-Chih Chiang, Po-Ming Chen, Tza-Hao Wang
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Abstract
A non-volatile memory cell is disclosed. In one example, the non-volatile memory cell includes: a substrate; a first oxide layer over the substrate; a floating gate over the first oxide layer; a second oxide layer over the floating gate; and a control gate at least partially over the second oxide layer. At least one of the first oxide layer and the second oxide layer comprises fluorine.
Claims20
A non-volatile memory cell, comprising:
- a substrate;
- a first oxide layer over the substrate;
- a floating gate over the first oxide layer;
- a second oxide layer over the floating gate, wherein at least one of the first oxide layer and the second oxide layer comprises fluorine;
- and
- a control gate at least partially over the second oxide layer.
A method for forming a non-volatile memory cell, comprising:
- forming a substrate;
- forming a first oxide layer over the substrate;
- forming a floating gate over the first oxide layer;
- doping fluorine ions into the first oxide layer;
- forming a second oxide layer over the floating gate;
- and
- forming a control gate at least partially over the second oxide layer.
A method for foaming a non-volatile memory cell, comprising:
- forming a substrate;
- forming a first oxide layer over the substrate;
- forming a floating gate over the first oxide layer;
- forming a second oxide layer over the floating gate;
- forming a control gate at least partially over the second oxide layer;
- and
- doping fluorine ions into the second oxide layer.
Dependencies are inferred from the claim text.