Fin field effect transistor (finfet) device structure with conductive layer between gate and gate contact

A fin field effect transistor (FinFET) device structure, comprising:

• a fin structure formed over a substrate;
• a gate dielectric layer formed over the fin structure;
• a gate electrode layer formed over the gate dielectric layer;
• a dielectric layer formed over the gate electrode layer;
• a first conductive layer formed over the gate electrode layer and in the dielectric layer, wherein the first conductive layer comprises:
• a first layer electrically connected to the gate electrode layer;
• and
• a second layer embedded in the first layer;
• a barrier layer formed over the first conductive layer and in the dielectric layer, wherein a first interface between the barrier layer and the dielectric layer is aligned with a second interface between the first layer and the dielectric layer, and wherein the first interface and the second interface extend along the same direction;
• and
• a second conductive layer over the barrier layer, wherein the second conductive layer is electrically connected to the first conductive layer.

A fin field effect transistor (FinFET) device structure, comprising:

• a fin structure formed over a substrate;
• a gate structure formed over the fin structure;
• a first conductive layer formed over the gate structure;
• a second conductive layer formed over the first conductive layer;
• a barrier layer formed between the first conductive layer and the second conductive layer;
• a source/drain (S/D) structure formed over the fin structure and adjacent to the gate structure;
• a source/drain (S/D) contact structure formed over the source/drain (S/D) structure and adjacent to the gate structure, wherein a top surface of the source/drain (S/D) contact structure is higher than a bottom surface of the barrier layer and lower than a top surface of the barrier layer;
• and
• a dielectric layer formed over the gate structure and surrounding the first conductive layer, the barrier layer, and the source/drain (S/D) contact structure.