P-Type Strained Channel
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShahaji B. MORE, Huai-Tei YANG, Shih-Chieh CHANG, Shu KUAN, Cheng-Han LEE
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Abstract
In certain embodiments, a semiconductor device includes a substrate having an n-doped well feature and an epitaxial silicon germanium fin formed over the n-doped well feature. The epitaxial silicon germanium fin has a lower part and an upper part. The lower part has a lower germanium content than the upper part. A channel is formed from the epitaxial silicon germanium fin. A gate is formed over the epitaxial silicon germanium fin. A doped source-drain is formed proximate the channel.
Claims21
A semiconductor device, comprising:
- a substrate having an n-doped well feature;
- an epitaxial silicon germanium fin formed over the n-doped well feature, the epitaxial silicon germanium fin having a lower part and an upper part, wherein the lower part has a lower germanium content than the upper part;
- a channel in the epitaxial silicon germanium fin;
- and
- lightly doped source-drain regions formed from the epitaxial silicon germanium fin.
A semiconductor device, comprising:
- an epitaxial silicon germanium fin formed over a substrate, the epitaxial silicon germanium fin having a lower part and an upper part, wherein the lower part has a lower germanium content than the upper part;
- a channel formed from the epitaxial silicon germanium fin;
- a gate formed over the epitaxial silicon germanium fin;
- and
- a doped source-drain formed proximate the channel.
-20. (canceled)
A semiconductor device, comprising:
- an epitaxial silicon germanium fin over a substrate, the epitaxial silicon germanium fin having a lower part and an upper part, wherein the lower part has a lower germanium content than the upper part;
- an epitaxial silicon layer over the epitaxial silicon germanium fin;
- a gate formed over the epitaxial silicon layer;
- epitaxial source/drain regions along opposing sides of the gate and the epitaxial silicon layer, the epitaxial source/drain regions being doped with a p-type dopant;
- and
- a lightly-doped drain region extending through the epitaxial silicon layer and into the epitaxial silicon germanium fin, the lightly-doped region comprising a diffusion region having a dopant concentration decreasing from an interface between the epitaxial source/drain regions and the epitaxial silicon germanium layer toward a channel region, the lightly-doped drain region comprising an upper doped region over the diffusion region, the upper doped region having a uniform dopant concentration.
Dependencies are inferred from the claim text.