Semiconductor device and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Yi PENG, Carlos H. DIAZ, Chun Hsiung TSAI, Yu-Ming LIN
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Abstract
A semiconductor device includes a field effect transistor (FET). The FET includes a channel region and a source/drain region disposed adjacent to the channel region. The FET also includes a gate electrode disposed over the channel region. The FET is an n-type FET and the channel region is made of Si. The source/drain region includes an epitaxial layer including Si1-x-yM1xM2y, where M1 is one or more of Ge and Sn, and M2 is one or more of P and As, and 0.01≤x≤0.1.
Claims21
A semiconductor device including a field effect transistor (FET), the FET comprising:
- a channel region and a source/drain region disposed adjacent to the channel region;
- and
- a gate electrode disposed over the channel region, wherein:
- the channel region is made of Si, and
- the source/drain region includes an epitaxial layer including at least one of SiGe doped with Ga, GeSn doped with Ga, SiGeSn doped with Ga.
A semiconductor device including fin field effect transistors (FinFETs), comprising:
- a p-type FinFET including a first fin structure, a first source/drain structure and a first source/drain contact in contact with the first source/drain structure;
- an n-type FinFET including a second fin structure, a second source/drain structure and a second source/drain contact in contact with the second source/drain structure, wherein:
- at least one of the first and second source/drain structures includes a first epitaxial layer including at least one of SiGe doped with Ga, GeSn doped with Ga, SiGeSn doped with Ga.
(canceled)
A semiconductor device including a field effect transistor (FET), the FET comprising:
- a channel region and a source/drain region disposed adjacent to the channel region;
- and
- a gate electrode disposed over the channel region, wherein:
- the FET is a p-type FET,
- the channel region is made of Si, and
- the source/drain region includes an epitaxial layer including Si1-x-yGexSny doped with Ga, where 0.6≤x≤1.0.
Dependencies are inferred from the claim text.