Epitaxial source or drain structures for advanced integrated circuit structure fabrication

A method of fabricating an integrated circuit structure, the method comprising:

• forming a fin comprising silicon, the fin having a lower fin portion and an upper fin portion;
• forming a gate electrode over the upper fin portion of the fin, the gate electrode having a first side opposite a second side;
• recessing the fin at the first side of the gate electrode and at the second side of the gate electrode;
• forming a first epitaxial source or drain structure on a first portion of the recessed fin at the first side of the gate electrode;
• and
• forming a second epitaxial source or drain structure on a second portion of the recessed fin at the second side of the gate electrode, the first and second epitaxial source or drain structures comprising silicon and germanium and having a match-stick profile.

An integrated circuit structure, comprising:

• a P-type semiconductor device, comprising:
• a first fin comprising silicon, the first fin having a lower fin portion and an upper fin portion;
• a first gate electrode over the upper fin portion of the first fin, the first gate electrode having a first side opposite a second side;
• a first epitaxial source or drain structure embedded in the first fin at the first side of the first gate electrode;
• and
• a second epitaxial source or drain structure embedded in the first fin at the second side of the first gate electrode, the first and second epitaxial source or drain structures comprising silicon and germanium and having a profile;
• and
• an N-type semiconductor device, comprising:
• a second fin comprising silicon, the second fin having a lower fin portion and an upper fin portion;
• a second gate electrode over the upper fin portion of the second fin, the second gate electrode having a first side opposite a second side;
• a third epitaxial source or drain structure embedded in the second fin at the first side of the second gate electrode;
• and
• a fourth epitaxial source or drain structure embedded in the second fin at the second side of the second gate electrode, the third and fourth epitaxial source or drain structures comprising silicon and having substantially the same profile as the profile of the first and second epitaxial source or drain structures.