Asymmetric source and drain structures in semiconductor devices

A method for forming a semiconductor device, the method comprising:

• forming a first fin on a substrate;
• forming a second fin on the substrate;
• epitaxially growing a first source/drain region on the first fin;
• epitaxially growing a second source/drain region on the second fin, wherein the first source/drain region has a first vertical height greater than a second vertical height of the second source/drain region;
• and
• etching the first source/drain region and the second source/drain region, wherein the etching etches the first source/drain region at a faster rate than the second source/drain region.

A method for forming a semiconductor device, the method comprising:

• forming a first fin on a substrate;
• forming a second fin on the substrate;
• epitaxially growing a first source/drain region on the first fin;
• epitaxially growing a second source/drain region on the second fin;
• forming a first dielectric layer over the first source/drain region and the second source/drain region;
• forming a first opening and a second opening in the first dielectric layer, wherein forming the first opening and the second opening comprises etching the first source/drain region and the second source/drain region, wherein the etching etches the first source/drain region at a faster rate than the second source/drain region;
• and
• forming a first contact in the first opening and a second contact in the second opening, wherein a first contact area between the first contact and the first source/drain region is greater than a second contact area between the second contact and the second source/drain region.