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US 2019/0165170 A1Published application
Electronic junction device with a reduced recovery time for applications subject to the current recirculation phenomenon and related manufacturing process
AssigneeSTMicroelectronics S.r.l.
InventorsMarco SAMBI, Fabrizio Fausto Renzo TOIA, Marco MARCHESI, Marco MORELLI, Riccardo DEPETRO, Giuseppe BARILLARO, Lucanos Marsilio STRAMBINI
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Abstract
A process of forming integrated electronic device having a semiconductor body includes: forming a first electrode region having a first type of conductivity; forming a second electrode region having a second type of conductivity, which forms a junction with the first electrode region; and forming a nanostructured semiconductor region, which extends in one of the first and second electrode regions.
Claims20
A process, comprising:
- manufacturing an integrated electronic device, the manufacturing including:
- forming a first electrode region, having a first type of conductivity, in a semiconductor body;
- forming a second electrode region, having a second type of conductivity, in the semiconductor body, the second electrode region forming a junction with the first electrode region;
- forming a nanostructured semiconductor region extending in one of said first and second electrode regions;
- and
- forming an insulation region of dielectric material, which extends in said second electrode region and is laterally positioned with respect to said first electrode region, wherein said forming the nanostructured semiconductor region comprises forming said nanostructured semiconductor region to extend underneath and contact said insulation region.
3 more elements
A process, comprising:
- manufacturing an integrated electronic device in a semiconductor body, the manufacturing including;
- forming a first electrode region, having a first type of conductivity and a first doping level, in the semiconductor body;
- forming a second electrode region having a second type of conductivity in the semiconductor body, the second electrode region forming a junction with the first electrode region;
- and
- forming a nanostructured semiconductor region which extends in one of the first and second electrode regions, wherein forming the second electrode region includes:
- forming a first subregion arranged at a distance from the first electrode region;
- and
- forming a second subregion arranged between the first subregion and the first electrode region and contacting the first subregion and the first electrode region, the second subregion having a second doping level that is less than the first doping level and less than a third doping level of the first subregion;
- and wherein the nanostructured semiconductor region extends at least in part within the second subregion.
6 more elements
A process, comprising:
- manufacturing an integrated electronic device in a semiconductor body having a front surface, the manufacturing including:
- forming a trench in the semiconductor body starting from the front surface;
- forming a nanostructured semiconductor region in the semiconductor body, wherein forming the nanostructured semiconductor region includes carrying out an electrochemical etch of a part of the top region that defines a bottom of the trench;
- and
- forming an insulation region of dielectric material in the trench after forming the nanostructured semiconductor region.
2 more elements
Dependencies are inferred from the claim text.