Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a semiconductor substrate having a first main surface and a second main surface opposing to the first main surface;
• a trench formed in the first main surface;
• a gate insulating film formed on an inner surface of the trench;
• a gate electrode formed on the gate insulating film to fill in the trench;
• a channel region formed in the first main surface at a side of the trench;
• a source region formed in the channel region at the side of the trench;
• a drift layer formed in the semiconductor substrate under the channel region;
• a drain region formed in the second main surface and under the drift layer;
• a drain electrode formed on the second main surface and in contact with the drain region, the gate electrode, the channel region, the source region and the drain region serving as a vertical type MOSFET;
• and
• a capacitor element formed on the first main surface to stack over the vertical type MOSFET, the capacitor element including a first electrode electrically coupled to the source region, a second electrode electrically coupled to the drain region and an insulating film formed between the first and second electrodes,
• wherein the vertical type MOSFET and the capacitor element are disposed in an active region of the semiconductor substrate in a plan view,
• wherein the second electrode of the capacitor element extends from the active region to a peripheral region of the semiconductor substrate which is outside the active region in the plan view, and
• wherein the second electrode of the capacitor element is electrically coupled to the drain region at the peripheral region of the semiconductor substrate in the plan view.