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US 2019/0165164 A1Published application
Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsYusuke KOBAYASHI, Shinsuke HARADA, Takahito KOJIMA
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Abstract
A vertical MOSFET having a trench gate structure includes an n−-type drift layer and a p-type base layer formed by epitaxial growth. In n−-type drift layer, an n-type region, a lower second p+-type region and a first p+-type region are provided. A part of the lower second p+-type region extending in a direction opposite that of a depth of the trench and connected to the p-type base layer.
Claims5
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type;
- a first semiconductor layer of the first conductivity type provided on a front surface of the semiconductor substrate and having an impurity concentration that is lower than an impurity concentration of the semiconductor substrate;
- a second semiconductor layer of a second conductivity type provided on a first side of the first semiconductor layer, opposite a second side of the first semiconductor layer facing toward the semiconductor substrate;
- a first semiconductor region of the first conductivity type selectively provided in the second semiconductor layer and having an impurity concentration that is higher than the impurity concentration of the semiconductor substrate;
- a trench penetrating the first semiconductor region and the second semiconductor layer, and reaching the first semiconductor layer;
- a gate electrode provided in the trench, via a gate insulating film;
- a second semiconductor region of the second conductivity type selectively provided in the first semiconductor layer;
- and
- a third semiconductor region of the second conductivity type selectively provided in the first semiconductor layer, the third semiconductor region contacting a bottom of the trench, wherein
- a part of the second semiconductor region extends in a direction opposite that of a depth of the trench and is connected with the second semiconductor layer.
7 more elements
A semiconductor device comprising;
- a semiconductor substrate of a first conductivity type;
- a first semiconductor layer of the first conductivity type provided on a front surface of the semiconductor substrate and having an impurity concentration that is lower than an impurity concentration of the semiconductor substrate;
- a second semiconductor layer of a second conductivity type provided on a first surface of the first semiconductor layer, opposite a second surface of the first semiconductor layer facing toward the semiconductor substrate;
- a first semiconductor region of the first conductivity type selectively provided in the second semiconductor layer and having an impurity concentration that is higher than an impurity concentration of the semiconductor substrate;
- a trench penetrating the first semiconductor region and the second semiconductor layer, and reaching the first semiconductor layer;
- a gate electrode provided in the trench, via a gate insulating film;
- a second semiconductor region of the second conductivity type selectively provided in the first semiconductor layer;
- a third semiconductor region of the second conductivity type selectively provided in the first semiconductor layer, the third semiconductor region contacting a bottom of the trench;
- and
- a fourth semiconductor region of the second conductivity type selectively provided in a surface layer on the first side of the first semiconductor layer, the fourth semiconductor region contacting the second semiconductor region, wherein
- a width of the fourth semiconductor region is narrower than a width of the second semiconductor region.
8 more elements
Dependencies are inferred from the claim text.