Fin Field-Effect Transistor Device and Method

A method comprising:

• forming a fin protruding above a substrate, the fin having a PMOS region and an NMOS region;
• forming a first gate over the fin in the PMOS region;
• forming a second gate over the fin in the NMOS region;
• forming a first spacer layer over the fin, the first gate, and the second gate;
• forming a second spacer layer different from the first spacer layer over the first spacer layer;
• forming a patterned mask layer to cover the NMOS region while leaving the PMOS region exposed;
• and
• after forming the patterned mask layer,
• performing a first etching process to remove the second spacer layer from a top surface and sidewalls of the fin in the PMOS region;
• performing a second etching process to remove the first spacer layer from the top surface and the sidewalls of the fin in the PMOS region, thereby exposing the top surface and the sidewalls of the fin in the PMOS region;
• and
• epitaxially growing a first semiconductor material along the top surface and the sidewalls of the fin in the PMOS region.

A method comprising:

• forming a fin protruding above a substrate, the fin having a first portion in a PMOS region and having a second portion in an NMOS region;
• forming a first gate structure over the first portion of the fin in the PMOS region;
• forming a second gate structure over the second portion of the fin in the NMOS region;
• forming first epitaxial source/drain regions on opposing sides of the first gate structure and over the first portion of the fin, the first epitaxial source/drain regions being in the PMOS region and extending along a first upper surface and first sidewalls of the first portion of the fin;
• and
• forming second epitaxial source/drain regions on opposing sides of the second gate structure and over the second portion of the fin, the second epitaxial source/drain regions being in the NMOS region and over a second upper surface of the second portion of the fin in the NMOS region.