Semiconductor device and manufacturing method thereof
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsChao-Hsin WU, Li-Cheng CHANG, Cheng-Jia DAI, Shun-Cheng YANG
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Abstract
A semiconductor device includes a substrate, a channel layer, an active layer, and a gate electrode. The channel layer has a fin portion over the substrate. The active layer is over at least the fin portion of the channel layer. The active layer is configured to cause a two-dimensional electron gas (2DEG) to be formed in the channel layer along an interface between the channel layer and the active layer. The gate electrode is in contact with a sidewall of the fin portion of the channel layer.
Claims21
A semiconductor device, comprising:
- a substrate;
- a channel layer having a fin portion over the substrate;
- an active layer over at least the fin portion of the channel layer, the active layer configured to cause a two-dimensional electron gas (2DEG) to be formed in the channel layer along an interface between the channel layer and the active layer;
- and
- a gate electrode in contact with a sidewall of the fin portion of the channel layer.
A semiconductor device, comprising:
- a substrate;
- a first transistor over the substrate and having a first fin structure comprising a first channel layer and a first active layer over the first channel layer;
- and
- a second transistor over the substrate and having a second fin structure comprising a second channel layer and a second active layer over the second channel layer, wherein the first fin structure has a width less than that of the second fin structure, and the first transistor has a threshold voltage greater than that of the second transistor.
16-20. (canceled)
A semiconductor device, comprising:
- a substrate;
- a channel layer over the substrate;
- an active layer over the channel layer, wherein the active layer configured to cause a two-dimensional electron gas (2DEG) to be formed in the channel layer along an interface between the channel layer and the active layer;
- and
- a gate electrode extending from the substrate to above the channel layer.
Dependencies are inferred from the claim text.