Lateral bipolar junction transistor with dual base region
AssigneeInternational Business Machines Corporation
InventorsPouya Hashemi, Bahman Hekmatshoartabari, Alexander Reznicek, Karthik Balakrishnan, Jeng-Bang Yau
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Abstract
A structure and method of forming a lateral bipolar junction transistor (LBJT) that includes: a first base layer, a second base layer over the first base layer, and an emitter region and collector region present on opposing sides of the first base layer, where the first base layer has a wider-band gap than the second base layer, and where the first base layer includes a III-V semiconductor material.
Claims20
A lateral bipolar junction transistor (LBJT) device comprising:
- a first base layer;
- a second base layer over the first base layer;
- and
- an emitter region and collector region present on opposing sides of the first base layer, wherein the first base layer has a wider-band gap than the second base layer, and
- wherein the first base layer comprises a III-V semiconductor material.
A method for forming a lateral bipolar junction transistor (LBJT) device comprising:
- providing a III-V on insulator substrate that comprises an insulator layer and a III-V material layer;
- epitaxially forming a base material layer over the III-V material layer;
- forming emitter and collector extension regions on opposing sides of a second base material layer using ion implantation;
- and
- epitaxially forming an emitter region and a collector region in contact with the emitter and collector extension regions,
- wherein the III-V material layer has a wider band gap than the base material layer.
Dependencies are inferred from the claim text.