Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPeter RAMVALL, Matthias PASSLACK, Gerben DOORNBOS
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Abstract
A tunnel field-effect transistor (TFET), comprising a first source/drain layer comprising a first polar sidewall; a second source/drain layer surrounding the first source/drain layer, wherein the second source/drain layer and the first source/drain layer are of opposite conductivity types; and a semiconductor interlayer between the second source/drain layer and first polar sidewall of the first source/drain layer.
Claims20
A tunnel field-effect transistor (TFET), comprising:
- a first source/drain layer comprising a first polar sidewall;
- a second source/drain layer surrounding the first source/drain layer, wherein the second source/drain layer and the first source/drain layer are of opposite conductivity types;
- and
- a semiconductor interlayer between the second source/drain layer and first polar sidewall of the first source/drain layer.
A tunnel field-effect transistor (TFET), comprising:
- a semiconductor fin comprising a first polar sidewall and a first non-polar sidewall shorter than the first polar sidewall;
- a semiconductor interlayer in contact with the first polar sidewall of the semiconductor fin;
- and
- a semiconductor shell around the semiconductor interlayer, wherein the semiconductor fin and the semiconductor shell are of opposite conductivity types.
A method of forming a tunnel field-effect transistor, comprising:
- forming a first epitaxial layer having a first dopant over a substrate;
- etching the first epitaxial layer to form a fin with a polar sidewall;
- and
- forming in sequence a semiconductor interlayer and a second epitaxial layer to surround the fin, wherein the second epitaxial layer has a second dopant with a different conductivity type than the first dopant.
Dependencies are inferred from the claim text.