Method of making semiconductor device comprising flash memory and resulting device

A method for making a semiconductor device, comprising:

• patterning a first gate material layer and a gate insulating film over a substrate, the first gate material layer comprising a first gate material, the gate insulating film disposed on the first gate material layer;
• forming a second gate material layer over the substrate, the gate insulating film, and side walls of the first gate material layer, the second gate material layer comprising a second gate material;
• etching the second gate material layer to expose the substrate and the gate insulating film and provide a portion of the second gate material layer along each of the side walls of the first gate material layer;
• etching the gate insulating film and the first gate material layer, after the second gate material layer is formed and etched, so as to form a plurality of divided gate structures in a first region and a second region;
• and
• forming a plurality of transistors based on the plurality of divided gate structures in the first region and the second region, wherein in the first region the first gate material layer is configured to provide control gate electrodes and the second gate material layer is configured to provide memory gate electrodes.

A semiconductor device, comprising:

• a substrate having a first region and a second region;
• a flash metal oxide nitride oxide semiconductor (FMONOS) memory cell within and above the substrate in the first region, wherein the FNOMOS memory cell comprises a first gate material as a control gate electrode and a portion of a second gate material as a memory gate electrode;
• and
• at least one metal oxide semiconductor (MOS) transistor within and above the substrate in a second region, the at least one MOS transistor comprises a first MOS transistor having the first gate material and the second gate material as a gate electrode.