Method for manufacturing finfet structure with doped region
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShahaji B. MORE, Chun-Hsiung TSAI, Cheng-Yi PENG, Shih-Chieh CHANG, Kuo-Feng YU
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Abstract
Methods for forming semiconductor structures are provided. The method includes forming a fin structure over a substrate and forming a gate structure across the fin structure. The method further includes forming a fin spacer on a sidewall of the fin structure and partially removing the fin spacer. The method further includes recessing the fin structure to form a recess and implanting dopants from the recess to form a doped region. The method further includes diffusing the dopants in the doped region to form an expanded doped region and forming a source/drain structure over the expanded doped region.
Claims20
A method for forming a semiconductor structure, comprising:
- forming a fin structure over a substrate;
- forming a gate structure across the fin structure;
- forming a fin spacer on a sidewall of the fin structure;
- partially removing the fin spacer;
- recessing the fin structure to form a recess;
- implanting dopants from the recess to form a doped region;
- diffusing the dopants in the doped region to form an expanded doped region;
- and
- forming a source/drain structure over the expanded doped region.
A method for forming a semiconductor structure, comprising:
- forming a fin structure over a substrate;
- forming an isolation structure around the fin structure;
- forming a gate structure across the fin structure and extending over the isolation structure;
- forming a gate spacer on a sidewall of the gate structure;
- etching the fin structure to form a recess;
- implanting first dopants from the recess to form a doped region, wherein a first edge of the doped region is located under the gate spacer;
- diffusing the first dopants to form an expanded doped region, wherein a second edge of the expanded doped region is located under the gate structure;
- and
- forming a source/drain structure in the recess.
A method for forming a semiconductor structure, comprising:
- forming a first fin structure over a substrate;
- forming an isolation structure around the first fin structure;
- forming a gate structure across the first fin structure and extending over the isolation structure;
- forming a first fin spacer on a sidewall of the first fin structure;
- etching the first fin spacer to form a first sloping top surface;
- etching the first fin structure to form a first recess having a second sloping top surface;
- implanting first dopants in the first fin structure to form a first doped region;
- annealing the first doped region to form a first expanded doped region;
- and
- forming a source/drain structure over the first expanded doped region.
Dependencies are inferred from the claim text.