Fin field effect transistor fabrication and devices having inverted t-shaped gate
AssigneeInternational Business Machines Corporation
InventorsVeeraraghavan S. Basker, Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh
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Abstract
A method of forming a fin field effect transistor (finFET), including forming a temporary gate structure having a sacrificial gate layer and a dummy gate layer on the sacrificial gate layer, forming a gate spacer layer on each sidewall of the temporary gate structure, forming a source/drain spacer layer on the outward-facing sidewall of each gate spacer layer, removing the dummy gate layer to expose the sacrificial gate layer, removing the sacrificial gate layer to form a plurality of recessed cavities, and forming a gate structure, where the gate structure occupies at least a portion of the plurality of recessed cavities.
Claims20
A fin field effect transistor (finFET) having an inverted-T gate, comprising;
- a first gate spacer layer and a first source/drain spacer layer on one or more fins, wherein the first gate spacer layer is adjacent to the first source/drain spacer layer;
- a second gate spacer layer and a second source/drain spacer layer on the one of the one or more fins, wherein the second gate spacer layer is adjacent to the second source/drain spacer layer, and the first gate spacer layer is opposite the second gate spacer layer, wherein the first gate spacer layer includes a first recessed cavity, and the second gate spacer layer includes a second recessed cavity.
A fin field effect transistor (finFET) having an inverted-T gate, comprising;
- a first gate spacer layer and a first source/drain spacer layer on one or more fins, wherein the first gate spacer layer is adjacent to the first source/drain spacer layer;
- a second gate spacer layer and a second source/drain spacer layer on the one of the one or more fins, wherein the second gate spacer layer is adjacent to the second source/drain spacer layer, and the first gate spacer layer is opposite the second gate spacer layer, wherein the first gate spacer layer includes a first recessed cavity that extends to an inward facing sidewall of the first source/drain spacer layer, and the second gate spacer layer includes a second recessed cavity that extends to an inward facing sidewall of the second source/drain spacer layer, wherein the first gate spacer layer is separated from the second gate spacer layer by a width of about 10 nm to about 50 nm.
A fin field effect transistor (finFET) having an inverted-T gate, comprising;
- a first gate spacer layer and a first source/drain spacer layer on one or more fins, wherein the first gate spacer layer is adjacent to the first source/drain spacer layer;
- a second gate spacer layer and a second source/drain spacer layer on the one of the one or more fins, wherein the second gate spacer layer is adjacent to the second source/drain spacer layer, and the first gate spacer layer is opposite the second gate spacer layer, wherein the first gate spacer layer includes a first recessed cavity that extends to an inward facing sidewall of the first source/drain spacer layer, and the second gate spacer layer includes a second recessed cavity that extends to an inward facing sidewall of the second source/drain spacer layer, wherein the first gate spacer layer has a thickness in a range of about 1.5 nm to about 3 nm, and the second gate spacer layer has a thickness in a range of about 1.5 nm to about 3 nm;
- a gate dielectric layer that occupies the first recessed cavity and the second recessed cavity;
- and
- a gate metal fill on the gate dielectric layer to form an inverted-T gate structure.
Dependencies are inferred from the claim text.