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US 2019/0165141 A1Published application
Semiconductor device and manufacturing method thereof
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsChung-En TSAI, Fang-Liang LU, Pin-Shiang CHEN, Chee-Wee LIU
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Abstract
A method includes forming a fin structure over a substrate; forming a source/drain structure adjoining the fin structure, in which the source/drain structure includes tin; and exposing the source/drain structure to a boron-containing gas to diffuse boron into the source/drain structure to form a doped region in the source/drain structure.
Claims20
A method, comprising:
- forming a fin structure over a substrate;
- forming a source/drain structure adjoining the fin structure, wherein the source/drain structure comprises tin;
- and
- exposing the source/drain structure to a boron-containing gas to diffuse boron into the source/drain structure to form a doped region in the source/drain structure.
1 more element
A method, comprising:
- forming a fin structure over a substrate;
- partially removing the fin structure to form a recess in the fin structure;
- forming a source/drain structure in the recess, wherein the source/drain structure comprises tin;
- doping the source/drain structure with boron to form a doped region in the source/drain structure at a temperature lower than a recrystallization temperature of the source/drain structure;
- and
- forming an inter-layer dielectric (ILD) layer over the source/drain structure.
3 more elements
A semiconductor device, comprising:
- a fin structure over a substrate, wherein the fin structure comprises a first semiconductor layer and a second semiconductor layer over the first semiconductor layer;
- a gate stack over the substrate and crossing the fin structure;
- and
- a source/drain structure adjoining the fin structure, wherein the source/drain structure comprises a doped region, a boron concentration of the doped region is greater than about 1×1020 at/cm3, and a tin concentration of the doped region is greater than about 8 at %.
1 more element
Dependencies are inferred from the claim text.