Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorGeorgios VELLIANITIS
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Abstract
A method of manufacturing a semiconductor device includes forming an isolation region on a semiconductor substrate. A trench is formed in an <xyz> crystallographic direction of the semiconductor substrate in the isolation region. An epitaxial layer is grown in the trench. The epitaxial layer is patterned to form a semiconductor fin orientated along an <x′y′z′> crystallographic direction of the semiconductor substrate, wherein <x′y′z′>≠<xyz>.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming an isolation region on a semiconductor substrate;
- forming a trench in an <xyz> crystallographic direction of the semiconductor substrate in the isolation region;
- growing an epitaxial layer in the trench;
- and
- patterning the epitaxial layer to form a semiconductor fin orientated along an <x′y′z′> crystallographic direction of the semiconductor substrate, wherein <x′y′z′>≠<xyz>.
A method of manufacturing a semiconductor device, the method comprising:
- forming an epitaxial layer over a semiconductor substrate, wherein the epitaxial layer is orientated along <100> crystallographic direction;
- forming a hard mask over the epitaxial layer, wherein the hard mask is orientated along a <110> crystallographic direction;
- and
- patterning the epitaxial layer according to the hard mask to form a semiconductor fin.
A semiconductor device, comprising:
- a plurality of semiconductor fins, wherein the semiconductor fins have parallelogram top surfaces, the parallelogram top surface has two acute interior angles and two obtuse interior angles;
- and
- a gate structure over at least one of the semiconductor fins.
Dependencies are inferred from the claim text.