Semiconductor Structure Cutting Process and Structures Formed Thereby

A method comprising:

• trimming a fin on a substrate;
• forming a liner along respective first sidewalls of a first section and a second section of the fin, the first sidewalls of the first section and the second section of the fin being formed by trimming the fin;
• cutting the fin through the liner;
• and
• forming a fill material along the liner and where the fin was cut.

A method comprising:

• removing a gate structure from over a fin, the fin protruding from a substrate, removing the gate structure defining a region;
• trimming the fin in the region where the gate structure was removed;
• conformally depositing a liner in the region where the gate structure was removed and on the trimmed fin;
• anisotropically etching the liner;
• cutting the trimmed fin through the liner;
• and
• disposing an insulating material in the region where the gate structure was removed and where the trimmed fin was cut.