Heterogeneous semiconductor device substrates with high quality epitaxy
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCarlos H. DIAZ, Mark VAN DAL, Martin Christopher HOLLAND
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor structure comprises etching a semiconductor substrate having a top surface extending along a (001) crystal plane, such that a majority of a top surface of the etched semiconductor substrate extends along {111} crystal planes; forming a first epitaxial layer in contact with the top surface of the etched semiconductor substrate; and forming a second epitaxial layer on the first epitaxial layer.
Claims20
A method of manufacturing a semiconductor structure, the method comprising:
- etching a semiconductor substrate having a top surface extending along a (001) crystal plane, such that a majority of a top surface of the etched semiconductor substrate extends along {111} crystal planes;
- forming a first epitaxial layer in contact with the top surface of the etched semiconductor substrate;
- and
- forming a second epitaxial layer on the first epitaxial layer.
A method of manufacturing a semiconductor structure, the method comprising:
- forming a plurality of recesses in a semiconductor substrate, wherein the recesses are immediately adjacent to each other, and a sidewall of one of the recesses extends along a {111} crystal plane;
- forming a first epitaxial layer in the recesses;
- and
- forming a second epitaxial layer on the first epitaxial layer.
A semiconductor structure, comprising:
- a substrate having a plurality of silicon pyramids arranged in rows and columns;
- a first epitaxial layer in contact with sidewalls of the silicon pyramids;
- a second epitaxial layer over the first epitaxial layer;
- and
- an isolation region embedded in the second epitaxial layer.
Dependencies are inferred from the claim text.