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US 2019/0165133 A1Published application
Method for forming semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Ruei JHAN, Yi-Lun CHEN, Fang-Wei LEE, Han-Yu LIN, Li-Te LIN, Pinyen LIN
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Abstract
In some embodiments, a method is provided. Dummy gate stacks are formed over a semiconductor substrate. An interlayer dielectric (ILD) layer is formed over the dummy gate stacks. A first portion of the ILD layer over top surfaces of the dummy gate stacks is removed, such that a second portion of the ILD layer remains between the dummy gate stacks. The dummy gate stacks are replaced with metal gate stacks. Neutral NF3 radicals into the water are applied to etch the ILD layer.
Claims20
A method, comprising:
- forming dummy gate stacks over a semiconductor substrate;
- forming an interlayer dielectric (ILD) layer over the dummy gate stacks;
- removing a first portion of the ILD layer over top surfaces of the dummy gate stacks, such that a second portion of the ILD layer remains between the dummy gate stacks;
- replacing the dummy gate stacks with metal gate stacks;
- applying water over top surfaces of the second portion of the ILD layer and the metal gate stacks;
- and
- applying neutral NF3 radicals into the water to etch the ILD layer.
4 more elements
A method, comprising:
- forming a dummy gate stack over a semiconductor substrate;
- forming an interlayer dielectric (ILD) layer over the dummy gate stack;
- removing a first portion of the ILD layer over a top surface of the dummy gate stack, such that a second portion of the ILD layer remains around the dummy gate stack;
- replacing the dummy gate stack with a metal gate stack;
- and
- etching the ILD layer using HF2−.
3 more elements
A method, comprising:
- forming a dummy gate stack over a semiconductor substrate;
- forming a spacer layer over a sidewall of the dummy gate stack;
- forming an interlayer dielectric (ILD) layer over the dummy gate stack and the spacer layer;
- polishing the ILD layer until a top surface of the dummy gate stack is exposed;
- replacing the dummy gate stack with a metal gate stack;
- and
- etching the ILD layer using water and neutral NF3 radicals, wherein etching the ILD layer has a first etching rate of the ILD layer and a second etching rate of the spacer layer, and a ratio of the first etching rate of the ILD layer to the second etching rate of the spacer layer is greater than about 30.
4 more elements
Dependencies are inferred from the claim text.