Fabricating transistors with a dielectric formed on a sidewall of a gate material and a gate oxide before forming silicide

A method of fabricating a transistor, the method comprising:

• forming a collector region having majority carriers of a first type in a semiconductor substrate;
• forming a base region having majority carriers of a second type;
• forming a gate oxide on the semiconductor;
• forming a gate material on the gate oxide;
• etching the gate material and the gate oxide, exposing an emitter area of the base region surrounded by a first sidewall of the gate material and the gate oxide, and exposing a base contact area of the base region, the base contact area surrounding a second sidewall of the gate material and the gate oxide;
• implanting a first dopant in the emitter area thereby forming an emitter region having majority carriers of the first type;
• implanting a second dopant in the base contact area of the base region thereby forming a base contact region having majority carriers of the second type;
• depositing a dielectric over the semiconductor;
• patterning the dielectric, thereby forming a first dielectric portion covering a top surface of the gate material, the first sidewall of the gate material and the gate oxide, and exposing a portion of the semiconductor;
• depositing metal over the dielectric portion and the exposed portion of the semiconductor;
• and
• annealing the semiconductor to form silicide on or over the exposed portion of the semiconductor.

A method of forming an integrated circuit, comprising:

• implanting a dopant having a first conductivity type into a semiconductor substrate thereby forming a first doped region having the first conductivity type;
• implanting a dopant having a second different conductivity type into the first doped region, thereby forming a second doped region within the first doped region and having the second conductivity type;
• forming a polysilicon structure over the first doped region, the polysilicon structure having a top surface and first and second side surfaces;
• forming a dielectric structure that covers at least one of the first or second side surfaces and the top surface;
• and
• forming a metal silicide adjacent the dielectric structure.