Semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Cheng CHING, Kuan-Lun CHENG, Chih-Hao WANG, Keng-Chu LIN, Shi-Ning JU
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Abstract
A semiconductor device is disclosed that includes a plurality of isolation regions. A fin is arranged between the plurality of isolation regions. One of the plurality of isolation regions includes a first atomic layer deposition (ALD) layer, a second ALD layer, a flowable chemical vapor deposition (FCVD) layer, and a third ALD layer. The first ALD layer includes a first trench. The second ALD layer is formed in the first trench of the first ALD layer. The FCVD layer is formed in the first trench of the first ALD layer and on the second ALD layer. The third ALD layer is formed on the FCVD layer.
Claims20
A semiconductor device, comprising:
- a plurality of isolation regions, wherein a fin is arranged between two of the plurality of isolation regions, wherein one of the plurality of isolation regions comprises:
- a first atomic layer deposition (ALD) layer comprising a first trench;
- a second ALD layer formed in the first trench of the first ALD layer;
- a flowable chemical vapor deposition (FCVD) layer formed in the first trench of the first ALD layer and on the second ALD layer;
- and
- a third ALD layer formed on the FCVD layer.
A semiconductor device, comprising:
- a first isolation region comprising:
- a first ALD layer comprising a first trench;
- a second ALD layer formed in the first trench of the first ALD layer;
- a FCVD layer formed in the first trench of the first ALD layer and on the second ALD layer;
- and
- a deposition layer formed on the second ALD layer and the FCVD layer;
- a second isolation region comprising:
- a third ALD layer comprising a second trench;
- and
- a fourth ALD layer formed in the second trench of the third ALD layer;
- and
- at least one fin is arranged between the first isolation region and the second isolation region.
A semiconductor device, comprising:
- a plurality of fins;
- a plurality of isolation regions, wherein each of the plurality of isolation regions is formed between two of the plurality of fins being adjacent to each other, wherein a first isolation region of the plurality of isolation regions comprises:
- a first ALD layer comprising a first trench;
- and
- a second ALD layer, wherein the first trench of the first ALD layer is filled with the second ALD layer;
- wherein the first ALD layer and the second ALD layer are implanted with carbon and nitrogen, wherein a concentration of carbon implanted in the second ALD layer is higher than a concentration of carbon implanted in the first ALD layer, and a concentration of nitrogen implanted in the second ALD layer is higher than a concentration of nitrogen implanted in the first ALD layer.
Dependencies are inferred from the claim text.