Circuit Devices with Gate Seals
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSheng-Chou Lai, Tsung-Yu Chiang
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Abstract
Various examples of a circuit device that includes gate stacks and gate seals are disclosed herein. In an example, a substrate is received that has a fin extending from the substrate. A placeholder gate is formed on the fin, and first and second gate seals are formed on sides of the placeholder gate. The placeholder gate is selectively removed to form a recess between side surfaces of the first gate seal and the second gate seal. A functional gate is formed within the recess and between the side surfaces of the first gate seal and the second gate seal.
Claims20
A method comprising:
- receiving a substrate having a fin extending from the substrate;
- forming a placeholder gate on the fin;
- forming a first gate seal on a first side of the placeholder gate and a second gate seal on a second side of the placeholder gate;
- selectively removing the placeholder gate to form a recess between side surfaces of the first gate seal and the second gate seal;
- and
- forming a functional gate within the recess and between the side surfaces of the first gate seal and the second gate seal.
A method comprising:
- receiving a substrate having a channel region defined therein;
- forming a placeholder gate on the channel region;
- oxidizing the placeholder gate to form dielectric gate seals on the placeholder gate;
- forming a gate spacer on the dielectric gate seals;
- and
- replacing the placeholder gate with a functional gate such that the functional gate is disposed between the dielectric gate seals.
A device comprising;
- a pair of source/drain regions;
- a channel region disposed between the pair of source/drain regions;
- a gate stack disposed on the channel region;
- and
- a gate seal disposed on a side surface of the gate stack.
Dependencies are inferred from the claim text.