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US 2019/0165121 A1Published application
Semiconductor device and method for fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorJong Chul PARK
Life of this patent
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Abstract
A semiconductor device with improved reliability and a method for fabricating the same are provided. The semiconductor device includes a substrate, a first spacer defining a gate trench on the substrate, and a gate electrode in the gate trench, wherein a height of an upper surface of the gate electrode adjacent to the first spacer increases in a direction away from the first spacer.
Claims26
A semiconductor device comprising:
- a substrate;
- a first spacer defining a gate trench on the substrate;
- and
- a gate structure in the gate trench,
- wherein an upper surface of the gate structure is curved such that a height of the upper surface of the gate structure adjacent to the first spacer increases in a direction away from the first spacer, and
- the upper surface of the gate structure has an uppermost portion higher than an uppermost portion of the upper surface of the first spacer, and
- the gate structure includes a gate electrode and a gate insulating film between the gate electrode and the substrate.
4 more elements
(canceled)
A semiconductor device comprising:
- a substrate;
- a gate structure on the substrate, wherein the gate structure includes a gate electrode and a gate insulating film between the gate electrode and the substrate;
- and
- a spacer on a sidewall of the gate structure,
- wherein an upper surface of the gate structure has an uppermost portion higher than an uppermost portion of an upper surface of the spacer, and
- wherein the upper surface of the gate structure and the upper surface of the spacer are connected to each other to form a convex upper surface of the gate structure with respect to an upper surface of the substrate, and the spacer includes a concave upper surface with respect to the upper surface of the substrate.
3 more elements
(canceled)
16-17. (canceled)
(canceled)
22-23. (canceled)
A semiconductor device comprising:
- a substrate;
- a gate structure on the substrate;
- and
- a spacer on a sidewall of the gate structure,
- wherein an upper surface of the gate structure is curved,
- wherein an upper surface of the spacer is in contact with a sidewall of the gate structure at a first point, and
- wherein a height of a lowermost portion of the upper surface of the spacer in a direction perpendicular to an upper surface of the substrate is lower than a height of the first point in the direction perpendicular to the upper surface of the substrate.
4 more elements
27-34. (canceled)
Dependencies are inferred from the claim text.