Back to results
US 2019/0165120 A1Published application
Electronic device, manufacturing method for electronic device, and electronic apparatus
AssigneeFujitsu Limited
InventorShintaro SATO
Life of this patent
Estimating the term…
Abstract
An electronic device includes, a semiconductor layer, a source region and a drain region provided with the semiconductor layer to be interposed therebetween, a gate insulation film on the semiconductor layer between the source region and the drain region, and a gate of a graphene on the gate insulation film. The gate insulation film induces doping of charges in the graphene.
Claims12
An electronic device comprising:
- a semiconductor layer;
- a source region and a drain region provided with the semiconductor layer to be interposed therebetween;
- a gate insulation film on the semiconductor layer between the source region and the drain region, the gate insulation film configured to induce doping of charges in a graphene;
- and
- a gate of the graphene on the gate insulation film.
2 more elements
An electronic apparatus comprising:
- an electronic device including:
- a semiconductor layer;
- a source region and a drain region provided with the semiconductor layer to be interposed therebetween;
- a gate insulation film on the semiconductor layer between the source region and the drain region, the gate insulation film configured to induce doping of charges in a graphene;
- and
- a gate of the graphene on the gate insulation film, and
- peripheral circuitry coupled to the electronic device.
4 more elements
A manufacturing method for an electronic device comprising:
- forming a source region and a drain region apart from each other in a semiconductor layer;
- forming a gate insulation film on the semiconductor layer between the source region and the drain region, the gate insulation film configured to induce doping of charges in a graphene;
- and
- forming a gate of the graphene on the gate insulation film.
1 more element
Dependencies are inferred from the claim text.