Semiconductor device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJONGHAN LEE, WANDON KIM, JAEYEOL SONG, JEONGHYUK YIM, HyungSuk JUNG
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Abstract
Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device comprises a gate electrode on a substrate, an upper capping pattern on the gate electrode, and a lower capping pattern between the gate electrode and the upper capping pattern. The lower capping pattern comprises a first portion between the gate electrode and the upper capping pattern, and a plurality of second portions extending from the first portion onto corresponding side surfaces of the upper capping pattern. The upper capping pattern covers a topmost surface of each of the second portions.
Claims22
A semiconductor device comprising:
- a gate electrode on a substrate;
- an upper capping pattern on the gate electrode;
- and
- a lower capping pattern between the gate electrode and the upper capping pattern,
- wherein the lower capping pattern comprises:
- a first portion between the gate electrode and the upper capping pattern;
- and
- a plurality of second portions extending from the first portion onto corresponding side surfaces of the upper capping pattern,
- wherein the upper capping pattern covers a topmost surface of each of the second portions.
A semiconductor device comprising:
- a gate electrode on a substrate;
- an upper capping pattern on the gate electrode;
- a lower capping pattern between the gate electrode and the upper capping pattern;
- and
- an interlayer dielectric layer on the substrate and covering the gate electrode, the upper capping pattern, and the lower capping pattern,
- wherein a top surface of the upper capping pattern is located at the same height relative to the substrate in a vertical direction as that of a top surface of the interlayer dielectric layer, and
- wherein a topmost surface of the lower capping pattern is located at a lower height relative to the substrate in the vertical direction than that of the top surface of the interlayer dielectric layer.
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-26. (canceled)
Dependencies are inferred from the claim text.