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US 2019/0165113 A1Published application
Semiconductor device and fabrication method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Ming LIN, Peng-Soon LIM, Zi-Wei FANG
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Abstract
A method includes forming a gate dielectric layer over a semiconductor substrate, forming a first metal element-containing layer over the gate dielectric layer, and thermal soaking the first metal element-containing layer in a first gas, such that a constituent of the first gas is diffused into the first metal element-containing layer.
Claims20
A method, comprising:
- forming a gate dielectric layer over a semiconductor substrate;
- forming a first metal element-containing layer over the gate dielectric layer;
- and
- thermal soaking the first metal element-containing layer in a first gas, such that a constituent of the first gas is diffused into the first metal element-containing layer.
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A method, comprising:
- forming a gate dielectric layer over a channel region;
- forming a first metal element-containing layer over the gate dielectric layer;
- and
- treating the first metal element-containing layer with a first dopant-containing plasma, such that a first dopant is doped into a surface layer of the first metal element-containing layer from the first dopant-containing plasma to convert the surface layer of the first metal element-containing layer to a first dopant-containing layer.
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A semiconductor device, comprising:
- a semiconductor substrate;
- and
- a gate stack over the semiconductor substrate, the gate stack comprising:
- a gate dielectric layer over the semiconductor substrate;
- and
- a metal element-containing layer over the gate dielectric layer, wherein the metal element-containing layer has a bottom portion, a top portion over the bottom portion, and a dopant, and a first concentration of the dopant in the top portion of the metal element-containing layer is higher than a second concentration of the dopant in the bottom portion of the metal element-containing layer.
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Dependencies are inferred from the claim text.