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US 2019/0165112 A1Published application
Low-k Feature Formation Processes and Structures Formed Thereby
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWan-Yi Kao, Chung-Chi Ko
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Abstract
Embodiments of the present disclosure relate to a method of forming a low-k dielectric material, for example, a low-k gate spacer layer in a FinFET device. The low-k dielectric material may be formed using a precursor having a general chemical structure comprising at least one carbon atom bonded between two silicon atoms. A target k-value of the dielectric material may be achieved by controlling carbon concentration in the dielectric material.
Claims20
A method comprising:
- forming a low-k layer using an Atomic Layer Deposition (ALD) process, the ALD process comprising:
- for a cycle, flowing a silicon-carbon source precursor having a chemical structure comprising at least one carbon atom bonded between two silicon atoms;
- and
- repeating the cycle a number of times.
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A method comprising:
- forming a low-k layer using an Atomic Layer Deposition (ALD) process, the ALD process comprising:
- for a cycle, flowing a silicon-carbon source precursor having a chemical structure comprising at least one carbon atom bonded between at least two silicon atoms;
- flowing an oxygen source precursor, wherein a composition of the silicon-carbon source precursor or a ratio of the silicon-carbon source precursor to the oxygen source precursor in the cycle is selected to control a carbon concentration in the low-k layer;
- and
- repeating the cycle a number of times.
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A structure comprising:
- an active area on a substrate, the active area comprising a source/drain region;
- a gate structure over the active area;
- and
- a gate spacer along a sidewall of the gate structure, the gate spacer being disposed laterally between the gate structure and the source/drain region, the gate spacer comprising:
- a low-k layer having a carbon concentration in a range from greater than 0 atomic percent (at. %) to 30 at. % and a nitrogen concentration from 0 at. % to 3 at. %.
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Dependencies are inferred from the claim text.