Semiconductor structure and manufacturing method of the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYAO-WEN CHANG, GUNG-PEI CHANG, CHING-SHENG CHU, CHERN-YOW HSU
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Abstract
The present disclosure provides a semiconductor structure, including providing a metal layer, an adhesion-enhancing layer over the metal layer, a dielectric stack over the adhesion-enhancing layer, a contact penetrating the dielectric stack and the adhesion-enhancing layer and connecting with the metal layer, a barrier layer disposed between the contact and the dielectric stack, and a high-k dielectric layer disposed between the contact and the barrier layer.
Claims20
A semiconductor structure, comprising:
- a metal layer;
- an adhesion-enhancing layer over the metal layer;
- a dielectric stack over the adhesion-enhancing layer;
- a contact penetrating the dielectric stack, the adhesion-enhancing layer, and connecting with the metal layer;
- a barrier layer disposed between the contact and the dielectric stack;
- and
- a high-k dielectric layer disposed between the contact and the barrier layer.
A high voltage display structure, comprising:
- a semiconductor driver, comprising:
- a metal layer;
- an adhesion-enhancing layer over the metal layer;
- a dielectric stack over the adhesion-enhancing layer;
- a contact penetrating the dielectric stack, the adhesion-enhancing layer, and connecting with the metal layer;
- a barrier layer disposed between the contact and the dielectric stack;
- a high-k dielectric layer disposed between the contact and the barrier layer;
- and
- a glass substrate comprising a conductive pad,
- wherein the glass substrate is bonded to the semiconductor driver through the contact and the conductive pad.
A method for forming a semiconductor structure, comprising:
- forming a metal layer;
- forming an adhesion-enhancing layer over the metal layer by a silicide operation;
- forming a dielectric stack over the adhesion-enhancing layer;
- forming a trench in the dielectric stack by removing a portion of dielectric stack aligning with the metal layer;
- forming a barrier layer conforming to the sidewall of the trench;
- forming a high-k dielectric layer conforming to the barrier layer;
- and
- forming a contact in the trench and connecting to the metal layer.
Dependencies are inferred from the claim text.