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US 2019/0165109 A1Published application
Device isolation using preferential oxidation of the bulk substrate
AssigneeInternational Business Machines Corporation
InventorsAnirban Basu, Guy M. Cohen, Amlan Majumdar, Yu Zhu
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Abstract
A structure includes a semiconductor substrate, a semiconductor buffer layer disposed over the semiconductor substrate, an oxide layer disposed over the buffer layer, and a fin including a semiconductor material disposed over the oxide layer. The semiconductor material has an oxidation rate different from an oxidation rate of the buffer layer.
Claims20
A structure, comprising:
- a semiconductor substrate;
- a semiconductor buffer layer disposed over the semiconductor substrate;
- an oxide layer disposed over the buffer layer;
- and
- a fin comprising a semiconductor material disposed over the oxide layer,
- wherein the semiconductor material has an oxidation rate different from an oxidation rate of the buffer layer.
3 more elements
A structure, comprising:
- a semiconductor substrate;
- a semiconductor buffer layer disposed over the semiconductor substrate;
- an oxide layer disposed over the buffer layer;
- and
- a first fin and a second fin, each comprising a semiconductor material disposed over the oxide layer,
- wherein the oxide layer continuously extends from below a bottom surface of the first fin to below a bottom surface of the second fin, and
- wherein the first fin has an oxidation rate different from an oxidation rate of the buffer layer.
4 more elements
A structure,comprising:
- a semiconductor substrate;
- a semiconductor buffer layer disposed over the semiconductor substrate;
- an oxide layer disposed over the buffer layer;
- and
- a fin comprising a semiconductor material disposed over the oxide layer,
- wherein the semiconductor material has an oxidation rate different from an oxidation rate of the buffer layer.
3 more elements
Dependencies are inferred from the claim text.