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US 2019/0165107 A1Published application
Apparatuses with atomically-thin ohmic edge contacts between two-dimensional materials, methods of making same, and devices comprising same
AssigneeCornell University
InventorsJiwoong PARK, Hui GAO, Marcos H.D. GUIMARAES, Daniel C. RALPH, Kibum KANG, Saien XIE
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Abstract
Apparatuses comprising a substrate; a monolayer graphene film disposed on at least a portion of the substrate; and a single-layer transition metal dichalcogenide (TMD) disposed only on the substrate and lateral edges of the monolayer graphene film, methods of making the apparatuses, and devices comprising one or more of the apparatuses. The apparatuses have a one-dimensional ohmic edge contact between the monolayer graphene and monolayer semiconducting TMDs.
Claims20
An apparatus comprising:
- a substrate;
- a monolayer graphene film disposed on at least a portion of the substrate;
- and
- a single-layer transition metal dichalcogenide (TMD) disposed only on the substrate and lateral edges of the monolayer graphene film.
1 more element
A method comprising:
- forming a monolayer graphene film on a substrate;
- and
- forming a single-layer transition metal dichalcogenide (TMD) on the substrate that contacts one or more of the lateral edges of the monolayer graphene film, wherein the single-layer TMD is in contact with the substrate and only contacts the monolayer graphene film at the lateral edges.
Dependencies are inferred from the claim text.