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US 2019/0165103 A1Published application
Semiconductor device and fabricating method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Chieh Lu, Meng-Hsuan Hsiao, Tung-Ying Lee, Ling-Yen Yeh, Chih-Sheng Chang, Carlos H. Diaz
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Abstract
A semiconductor device includes a fin structure, a channel layer and a gate stack. The channel layer is disposed on sidewalls of the fin structure, wherein the channel layer contains a two-dimensional (2D) material. The gate stack is disposed over the channel layer, wherein the gate stack includes a ferroelectric layer.
Claims21
1-10. (canceled)
A semiconductor device comprising:
- a fin structure;
- a channel layer on sidewalls of the fin structure, wherein the channel layer comprises a two-dimensional material;
- and
- a gate stack over the channel layer, wherein the gate stack comprises a ferroelectric layer.
1 more element
A semiconductor device, comprising:
- a fin structure;
- an insulating two-dimensional material layer over the fin structure;
- a channel layer over the insulating two-dimensional material layer;
- a ferroelectric layer over the channel layer;
- and
- source/drain layers in contact with the insulating two-dimensional material layer and the channel layer.
3 more elements
A semiconductor device comprising:
- a transistor including source and drain layers, a channel layer between the source and drain layers, and a gate stack including:
- a ferroelectric layer on the channel layer;
- and
- a gate layer on the ferroelectric layer.
1 more element
Dependencies are inferred from the claim text.