Semiconductor device and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsI-HSIU WANG, YEAN-ZHAW CHEN, YING-TING HSIA, JHAO-PING JIANG, CHUN-CHIH CHENG
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Abstract
A method for manufacturing a semiconductor device includes following operations. A semiconductor substrate is received. A first semiconductive layer over the semiconductor substrate is formed. A plurality of dopants are formed in a first portion of the first semiconductive layer. A second portion of the first semiconductive layer is removed to form a patterned first semiconductive layer. A first sidewall profile of the first portion after the removing the second portion of the first semiconductive layer is controlled by adjusting a distribution of the plurality of dopants in the first portion.
Claims20
A method of manufacturing a semiconductor device, comprising:
- receiving a semiconductor substrate;
- forming a first semiconductive layer over the semiconductor substrate;
- forming a plurality of dopants in a first portion of the first semiconductive layer;
- and
- removing a second portion of the first semiconductive layer to form a patterned first semiconductive layer, wherein a first sidewall profile of the first portion after the removing the second portion of the first semiconductive layer is controlled by adjusting a distribution of the plurality of dopants in the first portion.
A method of manufacturing a semiconductor device, comprising:
- receiving a semiconductor substrate;
- forming a patterned semiconductive layer over the semiconductor substrate, wherein the patterned semiconductive layer comprises a first patterned semiconductive layer, and the first patterned semiconductive layer is doped;
- forming a dielectric layer on two opposite sides of the patterned semiconductive layer;
- removing the patterned semiconductive layer to form a gate trench in the dielectric layer;
- and
- forming a gate structure in the gate trench of the dielectric layer.
A semiconductor device, comprising:
- a semiconductor substrate;
- a pair of source/drain regions on the semiconductor substrate;
- and
- a gate structure on the semiconductor substrate and between the pair of source/drain regions, the gate structure comprising:
- a gate electrode comprising a bottom portion and a top portion over the bottom portion,
- wherein a first sidewall of the bottom portion is oblique to a top surface of the semiconductor substrate.
Dependencies are inferred from the claim text.